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GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FAST SWITCHING DIODES

FEATURES

Silicon epitaxial diode

500mW power dissipation

High speed switching diode

MECHANICAL

DATA

Polarity:Color band denotes cathode

Case:

LL-34 glass case

Weight: Approx 0.031 grams

Absolute

Maximum

Ratings (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Reverse voltage

VR

v

Peak reverse voltage

VRM

v

Average Rectified Current

IO

mA

Non-repetitive Peak Forward Current

IFSM

mA

Pow er dissipaton at tamb=25

Ptot

mW

Junction temperature

TJ

Storage temperature range

TSTG

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

@ IF=10mA

1.0

v

Leakage current

25

5

50

nA

uA

uA

Capacitance at VF=VR=0V

4

pF

Voltage rise when switching on tested with

50mA pulses tp=0,1uS , rise time

30ns, f

p=5 to 100KHz

2.5

V

Reverse recovery time

VR=6V,RL=100 ,at IR=1mA

trr

4.0

nS

Thermal resistance junction to ambient

350

K/W

V

0.45

3.5

0.4±0.1

Cathode indification

Dimensions in millimeters

±0.2

LL-34(SOD-80)

75

100

150

500

500

175

-55-175

1)

1) Valid prov ided that electrodes are kept at ambient temperature.

Glass-Encapsulate Diodes

LL4148