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MMST2907A 数据表(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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MMST2907A 数据表(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 2 page ![]() Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FEATURES Epitaxial planar die construction Complementary PNP Type available(MMST2222A) Marking:K3F MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO -60 V Collector-Emitter Voltage V CEO -60 V Emitter-Base Voltage V EBO -5 V Collector Current -Continuous I C -600 mA Collector Power Dissipation PC 200 mW Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage VCEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage VEBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -100 n A Collector cut-off current ICES VCB=-30V,IB=0 -100 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -100 nA DC current gain hFE(1) VCE=-10V,IC=-0.1mA 75 hFE(2) VCE=-10V,IC=-1mA 100 hFE(3) VCE=-10V,IC=-10mA 100 hFE(4) VCE=-10V,IC=-150mA 100 300 hFE(5) VCE=-10V,IC=-500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-150mA,IB=-15mA -0.4 V VCE(sat) IC=-500mA,IB=-50mA -1.6 V Base-emitter saturation voltage VBE(sat) IC=-150mA,IB=-15mA -0.6 -1.3 V VBE(sat) IC=-500mA,IB=-50mA -2.6 V Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz Output capacitance Cobo VCB=-10V,IE=0,f=0.1MHz 8 pF Input capacitance Cib VEB=-2V,IC=0,f=0.1MHz 30 pF Delay time td VCC=-30V,VBE(off)=-1.5V,IC=-150mA IB1==- 15mA 10 nS Rise time tr 40 nS Storage time tS VCC=-30V,IC=-150mA,IB1=-IB2=-15mA 80 nS Fall time tf 30 nS MMST2907A (PNP) 1. BASE 2. EMITTER SOT-323 3. COLLECTO |
类似零件编号 - MMST2907A |
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类似说明 - MMST2907A |
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