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STS12NH3LL 数据表(PDF) 2 Page - STMicroelectronics

部件名 STS12NH3LL
功能描述  N-CHANNEL 30 V - 0.008 ??- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET??MOSFET
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS12NH3LL 数据表(HTML) 2 Page - STMicroelectronics

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STS12NH3LL
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Table 3: Absolute Maximum ratings
(
) Pulse width limited by safe operating area
Table 4: Thermal Data
(
#) When Mounted on 1 inch² FR-4 board, 2 oz Cu (t
≤ 10 sec.)
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On /Off
Table 6: Dynamic
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS= 0)
30
V
VDGR
Drain-gate Voltage (RGS= 20 kΩ)
30
V
VGS
Gate-source Voltage
± 16
V
ID
Drain Current (continuous) at TC= 25°C
12
A
ID
Drain Current (continuous) at TC= 100°C
7.5
A
IDM ( )
Drain Current (pulsed)
48
A
Ptot
Total Dissipation at TC= 25°C
2.5
W
Tstg
Storage Temperature
– 55 to 150
°C
Tj
Max. Operating Junction Temperature
Rthj-amb (#)
Thermal Resistance Junction-ambient
50
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source Breakdown
Voltage
ID = 250 µA, VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
± 100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 6 A
VGS = 4.5 V, ID = 6 A
0.008
0.010
0.0105
0.013
Ω
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS= 15V, ID= 6 A
TBD
S
Ciss
Input Capacitance
VDS= 25V, f= 1 MHz, VGS= 0
965
pF
Coss
Output Capacitance
285
pF
Crss
Reverse Transfer
Capacitance
38
pF



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