PCMFXUSB3S_SER

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© NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet

Rev. 2 — 7 March 2016

12 of 23

NXP Semiconductors

PCMFxUSB3S series

Common-mode EMI filter for differential channels with ESD protection

The device uses an advanced clamping structure showing a negative dynamic resistance.

This snapback behavior strongly reduces the clamping voltage to the system behind the

ESD protection during an ESD event. Do not connect unlimited DC current sources to the

data lines to avoid keeping the ESD protection device in snapback state after exceeding

breakdown voltage (due to an ESD pulse for instance).

Transmission Line Pulse (TLP) = 100 ns;

Transmission Line Pulse (TLP) = 100 ns;

Fig 17. Dynamic resistance with positive clamping;

typical values

Fig 18. Dynamic resistance with negative clamping;

typical values

Very-Fast Transmission Line Pulse (VF-TLP) = 5 ns;

Very-Fast Transmission Line Pulse (VF-TLP) = 5 ns;

Fig 19. Dynamic resistance with positive clamping;

typical values

Fig 20. Dynamic resistance with negative clamping;

typical values

025

20

10

15

5

aaa-019781

10

15

5

20

25

I

(A)

0

-25

0

-5

-15

-10

-20

aaa-019782

-15

-10

-20

-5

0

I

(A)

-25

025

20

10

15

5

aaa-021984

10

15

5

20

25

I

(A)

0

-25

0

-5

-15

-10

-20

aaa-021983

-15

-10

-20

-5

0

I

(A)

-25