DMTH3002LPS datasheet(2/7 Pages) DIODES

2 / 7 page

DMTH3002LPS

Document number: DS38282 Rev. 3 - 2

2 of 7

www.diodes.com

June 2016

DMTH3002LPS

Maximum Ratings (@TC = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±16

Continuous Drain Current, VGS = 10V (Note 7)

Steady

State

TC = +25°C

TC = +100°C

100

Maximum Continuous Body Diode Forward Current (Note 7)

100

Pulsed Drain Current (380

μs Pulse, Duty Cycle = 1%)

IDM

150

Avalanche Current, L=3mH (Note 8)

IAS

Avalanche Energy, L=3mH (Note 8)

EAS

700

Thermal Characteristics (@TC = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

1.2

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

103

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

2.5

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

Total Power Dissipation (Note 7)

TC = +25°C

136

Thermal Resistance, Junction to Case (Note 7)

RθJC

1.1

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TC = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

μA

VDS = 24V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±16V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

—

VDS = VGS, ID = 1mA

Static Drain-Source On-Resistance

RDS(ON)

—

1.25

1.6

Ω

VGS = 10V, ID = 25A

—

2.5

VGS = 4.5V, ID = 25A

Diode Forward Voltage

VSD

—

0.8

1.1

VGS = 0V, IS = 25A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

CISS

—

5,000

—

VDS = 15V, VGS = 0V,

f = 1MHz

Output Capacitance

COSS

—

2,660

—

Reverse Transfer Capacitance

CRSS

—

300

—

Gate Resistance

—

0.75

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

VDS = 15V, ID = 25A

Total Gate Charge (VGS = 10V)

—

Gate-Source Charge

QGS

—

Gate-Drain Charge

QGD

—

Turn-On Delay Time

tD(ON)

—

VDD = 15V, VGS = 4.5V,

ID = 25A, RG = 4.7Ω

Turn-On Rise Time

—

Turn-Off Delay Time

tD(OFF)

—

Turn-Off Fall Time

—

Body Diode Reverse Recovery Time

tRR

—

IS = 15A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

DMTH3002LPS 数据表(PDF) 2 Page - Diodes Incorporated

DMTH3002LPS 数据表(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7

数据表下载

链接网址

DMTH3002LPS 数据表(PDF) 2 Page - Diodes Incorporated

DMTH3002LPS 数据表(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7

数据表 下载

链接网址

数据表下载