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PAM2804 数据表(PDF) 3 Page - Diodes Incorporated

部件名 PAM2804
功能描述  1A STEP-DOWN CONSTANT CURRENT, HIGH EFFICIENCY LED DRIVER
PDF  10 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

PAM2804 数据表(HTML) 3 Page - Diodes Incorporated

  PAM2804 Datasheet HTML 1Page - Diodes Incorporated PAM2804 Datasheet HTML 2Page - Diodes Incorporated PAM2804 Datasheet HTML 3Page - Diodes Incorporated PAM2804 Datasheet HTML 4Page - Diodes Incorporated PAM2804 Datasheet HTML 5Page - Diodes Incorporated PAM2804 Datasheet HTML 6Page - Diodes Incorporated PAM2804 Datasheet HTML 7Page - Diodes Incorporated PAM2804 Datasheet HTML 8Page - Diodes Incorporated PAM2804 Datasheet HTML 9Page - Diodes Incorporated Next Button
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PAM2804
Document number: DS36403 Rev. 3 - 2
3 of 10
www.diodes.com
September 2015
© Diodes Incorporated
PAM2804
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Parameter
Rating
Unit
Supply Voltage
2.5 to 6.0
°C
Operation Temperature Range
-40 to +85
Junction Temperature Range
-40 to +125
Thermal Information
Parameter
Symbol
Package
Max
Unit
Thermal Resistance (Junction to Case)
θJC
TSOT25 (Note 1)
130
°C/W
Thermal Resistance (Junction to Ambient)
θJA
TSOT25
250
Internal Power Dissipation
PD
TSOT25
400
mW
Note:
1. The maximum output current for TSOT25 package is limited by internal power dissipation capacity as described in Application Information herein after.
Electrical Characteristics
(@TA = +25°C, VIN = 4.2V, Real WLED load, L = 4.7µH, CIN = 10µF, CO = 10µF, unless otherwise specified.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Input Voltage Range
VIN
-
2.5
-
6.0
V
Regulated Feedback Voltage
VFB
-
0.095
0.100
0.105
V
Peak Inductor Current
IPK
VIN = 5V
-
1.5
-
A
Quiescent Current
IQ
No Load
-
180
-
µA
Shutdown Current
ISD
VEN = 0V
-
-
1
µA
Oscillator Frequency
fOSC
VO = 100%
1.2
1.5
1.8
MHz
Drain-Source On-State Resistance
RDS(ON)
IDS = 100mA
P MOSFET
-
0.30
0.45
N MOSFET
-
0.35
0.50
SW Leakage Current
ILSW
-
-
±0.01
1
µA
High Efficiency
η
-
-
93
-
%
EN Threshold High
VEH
-
1.5
-
-
V
EN Threshold Low
VEL
-
-
-
0.3
V
EN Leakage Current
IEN
-
-
±0.01
-
µA
Over-Temperature Protection
OTP
-
-
+150
-
°C
OTP Hysteresis
OTH
-
-
+30
-
°C



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