TPV593 datasheet(1/1 Pages) ASI

部件名	TPV593

功能描述	NPN SILICON RF POWER TRANSISTOR

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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1 / 1 page

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25

OC

NONE

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 40 mA

26

V

BVCBO

IC = 10 mA

45

V

BVEBO

IE = 10 mA

4.0

V

hFE

VCE = 5.0 V

IC = 250 mA

10

---

Cob

VCB = 28 V

f = 1.0 MHz

8.0

pF

PG

Po = 2.0 W

SOUND CARRIER

= -10 dB

VISION CARRIER

= -8.0 dB

CHROMA

= 16 dB

VCE = 25 V

IC = 410 mA

f = 860 MHz

10

12

dB

IMD3

Po = 2.0 W

SOUND CARRIER

= -10 dB

VISION CARRIER

= -8.0 dB

CHROMA

= 16 dB

VCE = 25 V

IC = 410 mA

f = 860 MHz

-60

dBc

NPN SILICON RF POWER TRANSISTOR

TPV593

DESCRIPTION:

The

ASI TPV593 is a Common

Emitter Device Designed for Class A

High Linearity Television Band IV and

V Transmitter Applications.

FEATURES INCLUDE:

• Gold Metalization

• Emitter Ballasting

• High Gain

MAXIMUM RATINGS

IC

1.2 A

VCB

45 V

PDISS

17.5 W @ TC = 25

OC

TJ

-55

OC to +200 OC

TSTG

-55

OC to +200 OC

θθ

JC

10

OC/W

PACKAGE STYLE .280 4L STUD

1 = COLLECTOR

2 = BASE

3 & 4 = EMITTER

类似零件编号 - TPV593

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