1SMA64AT3 datasheet(2/6 Pages) ONSEMI

2 / 6 page

1SMA5.0AT3 Series

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms

PPK

400

DC Power Dissipation @ TL = 75°C

Measured Zero Lead Length (Note 2)

Derate Above 75

°C

Thermal Resistance from Junction to Lead

RqJL

1.5

mW/

°C

°C/W

DC Power Dissipation (Note 3) @ TA = 25°C

Derate Above 25

°C

Thermal Resistance from Junction to Ambient

RqJA

0.5

4.0

250

mW/

°C

°C/W

Forward Surge Current (Note 4) @ TA = 25°C

IFSM

Operating and Storage Temperature Range

TJ, Tstg

−65 to +150

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. 10 X 1000

ms, non−repetitive

2. 1

″ square copper pad, FR−4 board

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

Uni−Directional TVS

IPP

VRWM

VC VBR

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted, VF = 3.5 V Max. @

IF = 30 A for all types) (Note 5)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

Forward Current

Forward Voltage @ IF

5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive

duty cycle.

1SMA64AT3 数据表(PDF) 2 Page - ON Semiconductor

1SMA64AT3 数据表(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6

数据表下载