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INA210CIRSWR 数据表(PDF) 6 Page - Texas Instruments |
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INA210CIRSWR 数据表(HTML) 6 Page - Texas Instruments |
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6 / 40 page ![]() 6 INA210, INA211, INA212, INA213, INA214, INA215 SBOS437I – MAY 2008 – REVISED SEPTEMBER 2016 www.ti.com Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA215 Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Pin Functions PIN I/O DESCRIPTION NAME NO. DCK RSW GND 2 9 Analog Ground IN– 5 4, 5 Analog input Connect to load side of shunt resistor. IN+ 4 2, 3 Analog input Connect to supply side of shunt resistor NC — 1, 7 — Not internally connected. Leave floating or connect to ground. OUT 6 10 Analog output Output voltage REF 1 8 Analog input Reference voltage, 0 V to V+ V+ 3 6 Analog Power supply, 2.7 V to 26 V (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) VIN+ and VIN– are the voltages at the IN+ and IN– terminals, respectively. (3) Input voltage at any terminal may exceed the voltage shown if the current at that terminal is limited to 5 mA. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage, VS 26 V Analog inputs, VIN+, VIN– (2) Differential (VIN+) – (VIN–) –26 26 V Common-mode(3) GND – 0.3 26 V REF input GND – 0.3 (VS) + 0.3 V Output(3) GND – 0.3 (VS) + 0.3 V Input current into any terminal(3) 5 mA Operating temperature –55 150 °C Junction temperature 150 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT INA21x, Version A V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 INA21x, Version B V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±3500 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 |
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