If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

V

IN

−0.3 to 6.5V

V

only to micro SMD)

−0.3V to (V

with 6V max

Junction Temperature

150˚C

Storage Temperature

−65˚C to +150˚C

Lead Temp, Pad Temp.

235˚C

Power Dissipation (Note 3)

SOT23-5

micro SMD

364mW

355mW

ESD Rating (Note 4)

Human Body Model

2kV

Machine Model

SOT23-5 (Note 13)

150V

micro SMD

200V

V

IN(Note 15)

2.5V to 6V

V

0toV

IN

Junction Temperature

−40˚C to +125˚C

Junction-to-Ambient Thermal

Resistance (

θ

SOT23-5

micro SMD

Maximum Power Dissipation (Note 5)

SOT23-5

micro SMD

250mW

244mW

Electrical Characteristics

Unless otherwise specified: V

appearing in standard typeface are for T

range for operation, −40˚C to +125˚C. (Note 6) (Note 7)

Symbol

Parameter

Conditions

Typ

Limit

Units

Min

Max

∆V

OUT

Output Voltage

Tolerance

−20˚C % T

−40˚C % T

−2

−3

−3.5

2

3

3.5

%of

V

OUT(nom)

−40˚C % T

-3

3

Line Regulation Error

V

−0.15

−0.2

0.15

0.2

%/V

Load Regulation Error

(Note 8)

I

0.005

0.007

%/mA

PSRR

Power Supply Rejection Ratio

V

f = 1 kHz,

I

65

dB

V

f = 10 kHz,

I

45

I

Q

Quiescent Current

V

85

120

µA

V

140

200

V

0.003

1.0

Dropout Voltage (Note 9)

I

1

5

mV

I

80

115

150

I

SC

Short Circuit Current Limit

(Note 10)

600

mA

e

n

Output Noise Voltage

BW = 10 Hz to 100 kHz,

C

220

µVrms

C

OUT

Output Capacitor

Capacitance (Note 11)

120

µF

ESR (Note 11)

5

500

m

Ω

TSD

Thermal Shutdown Temperature

160

˚C

Thermal Shutdown Hysteresis

20

˚C

Enable Control Characteristics (Note 12)

I

EN

Maximum Input Current at EN

V

0.1

µA

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