P0102BL

4/5

Fig. 7: Relative variation of dV/dt immunity

versus gate-cathode capacitance (typical values).

Fig. 8: Surge peak on-state current versus

number of cycles.

Fig. 9:

Non-repetitive

surge peak on-state

current

for

a

sinusoidal

pulse

with

width

tp < 10ms, and corresponding value of I²t.

Fig. 10: On-state characteristics (maximum

values).

Fig. 11: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, copper thickness: 35

µm).

0123

4567

0

2

4

6

8

10

VD = 0.67 x VDRM

Tj = 125 °C

Rgk = 1k

Ω

dV/dt[Cgk] / dV/dt [Rgk = 1k

Ω]

Cgk(nF)

ITSM(A)

Number of cycles

1

0

1

2

3

4

5

6

7

10

100

1000

0.01

0.10

1.00

10.00

0.1

1.0

10.0

100.0

Tj initial = 25 °C

ITSM

tp(ms)

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

1E-2

1E-1

1E+0

1E+1

ITM(A)

Tj max.:

Vto = 1.00 V

Rd = 1

Ω

Tj = Tj max.

Tj = 25°C

VTM(V)

0

1020

30405060

708090

100

0

100

200

300

400

500

Rth(j-a) (°C/W)