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TL431BCLPREG 数据表(PDF) 2 Page - ON Semiconductor

部件名 TL431BCLPREG
功能描述  Programmable Precision References
PDF  18 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

TL431BCLPREG 数据表(HTML) 2 Page - ON Semiconductor

  TL431BCLPREG Datasheet HTML 1Page - ON Semiconductor TL431BCLPREG Datasheet HTML 2Page - ON Semiconductor TL431BCLPREG Datasheet HTML 3Page - ON Semiconductor TL431BCLPREG Datasheet HTML 4Page - ON Semiconductor TL431BCLPREG Datasheet HTML 5Page - ON Semiconductor TL431BCLPREG Datasheet HTML 6Page - ON Semiconductor TL431BCLPREG Datasheet HTML 7Page - ON Semiconductor TL431BCLPREG Datasheet HTML 8Page - ON Semiconductor TL431BCLPREG Datasheet HTML 9Page - ON Semiconductor Next Button
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TL431A, B Series, NCV431A, B Series, SCV431A
www.onsemi.com
2
1.0 k
Cathode
(K)
2.5 Vref
Anode (A)
Reference
(R)
4.0 k
150
Figure 1. Symbol
10 k
20 pF
800
Cathode (K)
3.28 k
Anode (A)
-
+
Anode
(A)
800
Reference
(R)
2.4 k
7.2 k
20 pF
800
Cathode
(K)
Reference
(R)
This device contains 12 active transistors.
Figure 2. Representative Block Diagram
Figure 3. Representative Schematic Diagram
Component values are nominal
MAXIMUM RATINGS (Full operating ambient temperature range applies, unless otherwise noted.)
Rating
Symbol
Value
Unit
Cathode to Anode Voltage
VKA
37
V
Cathode Current Range, Continuous
IK
−100 to +150
mA
Reference Input Current Range, Continuous
Iref
−0.05 to +10
mA
Operating Junction Temperature
TJ
150
°C
Operating Ambient Temperature Range
TA
°C
TL431I, TL431AI, TL431BI
−40 to +85
TL431C, TL431AC, TL431BC
0 to +70
NCV431AI, NCV431B, TL431BV, SCV431AI
−40 to +125
Storage Temperature Range
Tstg
−65 to +150
°C
Total Power Dissipation @ TA = 25°C
PD
W
Derate above 25
°C Ambient Temperature
D, LP Suffix Plastic Package
0.70
P Suffix Plastic Package
1.10
DM Suffix Plastic Package
0.52
Total Power Dissipation @ TC = 25°C
PD
W
Derate above 25
°C Case Temperature
D, LP Suffix Plastic Package
1.5
P Suffix Plastic Package
3.0
ESD Rating (Note 1)
Human Body Model per JEDEC JESD22−A114F
Machine Model per JEDEC JESD22−A115C
Charged Device Model per JEDEC JESD22−C101E
HBM
MM
CDM
>2000
>200
>500
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device contains latch−up protection and exceeds
±100 mA per JEDEC standard JESD78.
RECOMMENDED OPERATING CONDITIONS
Condition
Symbol
Min
Max
Unit
Cathode to Anode Voltage
VKA
Vref
36
V
Cathode Current
IK
1.0
100
mA
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.



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