TIP30D datasheet(1/2 Pages) ISC

部件名	TIP30D

功能描述	isc Silicon PNP Power Transistors

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistors

TIP30D

DESCRIPTION

·

DC Current Gain-

: hFE = 20(Min)@ IC= -0.2A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -120V(Min)

·

Complement to Type TIP29D

APPLICATIONS

·

Designed for use in general purpose amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-base Voltage

-160

V

VCEO

Collector-emitter Voltage

-120

V

VEBO

Emitter-base Voltage

-5

V

IC

Collector Current-Continuous

-1

A

ICM

Collector Current-Pulse

-3

A

IB

Base Current

-0.4

A

PC

Collector Power Dissipation

TC=25℃

30

w

Collector Power Dissipation

Ta=25℃

2

Tj

Junction Temperature

150

℃

Tstg

Storage Ttemperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.17

℃

/W

Rth j-a

Thermal Resistance,Junction to Ambient

62.5

℃

/W

类似零件编号 - TIP30D

制造商	部件名	数据表	功能描述
Mospec Semiconductor	TIP30	145Kb / 3P	POWER TRANSISTORS(1.0A,40-100V,30W)
Power Innovations Ltd	TIP30	85Kb / 6P	PNP SILICON POWER TRANSISTORS
Fairchild Semiconductor	TIP30	37Kb / 4P	Medium Power Linear Switching Applications
Micro Electronics	TIP30	56Kb / 1P	COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS
List of Unclassifed Man...	TIP30	335Kb / 6P	High Power Bipolar Transistor

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