| 数据搜索系统,热门电子元器件搜索 |
|
MBR16100CT 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
MBR16100CT 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBR16100CT FEATURES · Low Forward Voltage · Low power loss high efficiency · High Surge Capability · High Operating Junction Temperature · Low Stored Charge Majority Carrier Conduction · Pb-Free Packages are Available · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power Supply-output Rectification · Power Management · Instrumentation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current (Rated VR) 8 A IFRM Peak Repetitive Forward Current (Rated VR,Square Wave,20kHz) TC= 165℃ 16 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 150 A IRRM Peak Repetitive Reverse Surge Current (2.0μs, 1.0kHz) 0.5 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs |
类似零件编号 - MBR16100CT |
|
类似说明 - MBR16100CT |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |