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ST2310FX 数据表(PDF) 2 Page - STMicroelectronics |
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ST2310FX 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.9 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 1500 V VCE = 1500 V TJ = 125 oC 1 2 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 7 V 1 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA L = 25 mH 600 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 7 A IB = 1.75 A 3 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 7 A IB = 1.75 A 1.1 V hFE ∗ DC Current Gain IC = 1 A VCE = 5 V IC = 7 A VCE = 1 V IC = 7 A VCE = 5 V 6.5 25 5.5 9.5 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 6 A fh = 64 KHz IB(on) = 1 A VBE(off) = -2.5 V LBB(off) = 1.3 µH (see figure 1) 2.3 0.16 3 0.35 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance ST2310FX 2/6 |
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