 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
2SB768 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SB768 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
|
2 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB768 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.0 V ICBO Collector Cutoff Current VCB= -150V; IE= 0 -50 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -50 μ A hFENOTE DC Current Gain IC= -0.4A; VCE= -10V 40 200 fT Current-Gain—Bandwidth Product IC= -0.4A; VCE= -10V,f= 100MHz 10 MHz NOTE:Pulse test PW≤350us,duty cycle ≤2% hFE Classifications M L K 40-80 60-120 100-200 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
