CJS6562 datasheet(2/4 Pages) ZPSEMI

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Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static

VDS =VGS, ID =250µA

0.6

Gate-Threshold Voltage

VGS(th)

VDS =VGS, ID =

-250µA

N-Ch

P-Ch

-0.6

-1.2

1.2

Gate-Body Leakage

IGSS

VDS =0V, VGS =

±12V

N-Ch

P-Ch

±100

VDS =20V, VGS =0V

VDS =-20V, VGS =0V

N-Ch

P-Ch

-1

VDS =20V, VGS =0V ,TJ=55

℃

Zero Gate Voltage Drain Current

IDSS

VDS =-20V, VGS =0V ,TJ=55

℃

N-Ch

P-Ch

-25

µA

VDS

≥5V, VGS =4.5V

On-State Drain Current

ID(on)

VDS

≥-5V, VGS =-4.5V

N-Ch

P-Ch

-30

VGS =4.5V, ID =4.5A

VGS =-4.5V, ID =-3.5A

N-Ch

P-Ch

0.023

0.040

0.030

0.05

VGS =2.5V, ID =3.9A

Drain-Source On-Resistance

RDS(on)

VGS =-2.5V, ID =-2.7A

N-Ch

P-Ch

0.032

0.061

0.040

0.0

Ω

VDS =10V, ID =4.5A

Forward Transconductance

gfs

VDS =-10V, ID =-3.5A

N-Ch

P-Ch

IS=1.25A,VGS=0V

Diode Forward Voltage

VSD

IS=-1.25A,VGS=0V

N-Ch

P-Ch

0.65

0.72

1.2

-1.2

Dynamicb

Total Gate Charge

N-Ch

P-Ch

Gate-Source Charge

Qgs

N-Ch

P-Ch

3.0

3.5

Gate-Drain Charge

Qgd

N-Channel

VDS =15V,VGS =4.5V,ID =4.5A

P-Channel

VDS =-15V,VGS =-4.5V,ID =-3.5A

N-Ch

P-Ch

3.3

3.5

Turn-On Delay Time

td(on)

N-Ch

P-Ch

Rise Time

N-Ch

P-Ch

Turn-Off Delay Time

td(off)

N-Ch

P-Ch

100

Fall Time

N-Channel

VDD=10V,RL=10Ω, ID ≈1A,

VGEN=10V,RG=6Ω

P-Channel

VDD=-10V,RL=10Ω, ID ≈-1A,

VGEN=-10V,RG=6Ω

N-Ch

P-Ch

IF=1.25A,di/dt=100A/µs

Source- Drain

Reverse Recovery Time

trr

IF=-1.25A,di/dt=100A/µs

N-Ch

P-Ch

100

Notes :

Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.

Guaranteed by design, not subject to production testing.

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CJS6562

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