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CJS8804 数据表(PDF) 2 Page - ZP Semiconductor

部件名 CJS8804
功能描述  Plastic-Encapsulate MOSFETS
PDF  3 Pages
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制造商  ZPSEMI [ZP Semiconductor]
网页  http://zpsemi.com/
标志 ZPSEMI - ZP Semiconductor

CJS8804 数据表(HTML) 2 Page - ZP Semiconductor

  CJS8804 Datasheet HTML 1Page - ZP Semiconductor CJS8804 Datasheet HTML 2Page - ZP Semiconductor CJS8804 Datasheet HTML 3Page - ZP Semiconductor  
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ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS
VGS = 0V, ID =250µA
20
V
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
10
µA
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
±10
µA
Gate threshold voltage (note 1)
VGS(th)
VDS =VGS, ID =250µA
0.5
1
V
Drain-source on-resistance (note 1)
RDS(on)
VGS =10V, ID =8A
13
mΩ
VGS =4.5V, ID =5A
14
mΩ
VGS =3.8V, ID =5A
15.5
mΩ
VGS =2.5V, ID =4A
19
mΩ
VGS =1.8V, ID =3A
27
mΩ
Forward tranconductance (note 1)
gFS
VDS =5V, ID =8A
36
S
Diode forward voltage(note 1)
VSD
IS=1A, VGS = 0V
1
V
DYNAMIC PARAMETERS
(note 2)
Input Capacitance
Ciss
VDS =10V,VGS =0V,f =1MHz
1800
pF
Output Capacitance
Coss
230
pF
Reverse Transfer Capacitance
Crss
200
pF
Total gate charge
Qg
VDS =10V,VGS =4.5V,ID =8A
17.9
nC
Gate-source charge
Qgs
1.5
nC
Gate-drain charge
Qgd
4.7
nC
SWITCHING PARAMETERS
(note 2)
Turn-on delay time
td(on)
VGS=10V,VDS=10V,
RL=1.2Ω,RGEN=3Ω
2.5
ns
Turn-on rise time
tr
7.2
ns
Turn-off delay time
td(off)
49
ns
Turn-off fall time
tf
10.8
ns
Notes :
1.
Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
2.
Guaranteed by design, not subject to production testing.
2 of 3
sales@zpsemi.com
www.zpsemi.com
CJS8804



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