ACST6

6/10

®

Figure 10: Non repetitive surge peak on-state

current for a sinusoidal pulse with width tp <

Figure 11: Relative variation of gate trigger

current, holding current and latching current

versus junction temperature (typical values)

Figure 12: Relative variation of critical rate of

decrease of main current versus reapplied (dV/

dt)c (typical values)

Figure 13: Relative variation of critical rate of

decrease of main current versus junction tem-

perature

Figure 14: Relative variation of dV/dt immunity

versus junction temperature for different val-

ues of gate to com resistance (gate open is the

reference value)

Figure 15: Thermal resistance junction to

ambient versus copper surface under tab

(printed circuit board FR4, copper thickness:

35

0.01

0.10

1.00

10.00

1

10

100

1000

I

(A), I t (A s)

TSM

22

t (ms)

p

T initial=25°C

j

I t

2

dI/dt limitation:

100A/µs

-40

-20

0

20

40

60

80

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I,

, [T

,

I

] / I

I , I [T =25°C]

HL

j

GT

H

L

j

T (°C)

j

I

QI, QII, I & I

GT

H

L

I

QIII

GT

0.1

1.0

10.0

100.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

(dV/dt)c (V/µs)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

T = 125°C

j

0

25

50

75

100

125

0

1

2

3

4

5

6

(dI/dt)c[T ] /

j

(dI/dt)c[T =125°C]

j

0

25

50

75

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

R

= 1kW

gk

Gate open

dV/dt[T ] /

j

dV/dt[T =125°C]

j

0

2

4

6

8

10121416

1820

0

10

20

30

40

50

60

70

S(Cu)(cm²)

R

(°C/W)

th(j-a)