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ACST6-7ST 数据表(PDF) 5 Page - STMicroelectronics |
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ACST6-7ST 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() ACST6 5/10 ® Figure 4: Maximum power dissipation versus RMS on-state current (full cycle) Figure 5: RMS on-state current versus case temperature (full cycle) Figure 6: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35 µm), full cycle Figure 7: Relative variation of thermal imped- ance versus pulse duration 01 2345 6 0 1 2 3 4 5 6 7 8 P(W) I (A) T(RMS) 0 25 50 75 100 125 0 1 2 3 4 5 6 7 TO-220AB, D PAK & I 22PAK TO-220FPAB I (A) T(RMS) T (°C) C 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 DPAK S=1cm 2 2 I (A) T(RMS) T (°C) amb TO-220FPAB, TO-220AB & I Free air 2PAK 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1E-3 1E-2 1E-1 1E+0 Zth(j-c) TO-220AB, D PAK & I PAK 22 Zth(j-c) TO-220FPAB Zth(j-a) K=[Z /R ] th th t (°C) p Figure 8: On-state characteristics (maximum values) Figure 9: Surge peak on-state current versus number of cycles 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 50.0 I (A) TM V (V) TM T max. V = 0.9V R = 80m j T0 d Ω 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 I (A) TSM Number of cycles Non repetitive Tj initial=25°C Repetitive T =105°C c t=20ms |
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