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ACST6-7SFP 数据表(PDF) 2 Page - STMicroelectronics

部件名 ACST6-7SFP
功能描述  OVER VOLTAGE PROTECTED AC POWER SWITCH
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ACST6-7SFP 数据表(HTML) 2 Page - STMicroelectronics

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Table 2: Absolute Ratings (limiting values)
Note 1: according to test described by IEC61000-4-5 standard and figure 3.
Table 3: Gate Characteristics (maximum values)
Table 4: Thermal Resistances
Symbol
Parameter
Value
Unit
VDRM/
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
700
V
IT(RMS)
RMS on-state current full cycle sine wave
50 to 60 Hz, no heat sink
Tamb = 40 °C
1.5
A
RMS on-state current full cycle sine wave
50 to 60 Hz, TO-220AB package
Tcase = 105 °C
6
A
ITSM
Non repetitive surge peak on-state current
Tj initial = 25 °C, full cycle sine wave
tp = 20ms
45
A
tp = 16.7ms
50
A
I2t
Thermal constraint for fuse selection
tp = 10ms
11
A2s
dI/dt
Non repetitive on-state current critical rate of rise
IG = 10mA (tR < 100ns)
Rate period > 1mn
100
A/
µs
VPP
Non repetitive line peak pulse voltage (see note 1)
2
kV
Tstg
Storage temperature range
- 40 to + 150
°C
Tj
Operating junction temperature range
- 30 to + 125
°C
Tl
Maximum lead soldering temperature during 10s
260
°C
Symbol
Parameter
Value
Unit
PG (AV)
Average gate power dissipation
0.1
W
PGM
Peak gate power dissipation (tp = 20µs)
10
W
IGM
Peak gate current (tp = 20µs)
1
A
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient TO-220AB / TO-220FPAB
60
°C/W
Rth(j-a)
Junction to ambient I2PAK
65
Rth(j-a)
Junction to ambient D2PAK soldered on 1 cm2 copper pad
45
Rth(j-c)
Junction to case for full cycle sine wave conduction (TO-220AB)
2.5
°C/W
Rth(j-c)
Junction to case for full cycle sine wave conduction (TO-220FPAB)
3.5



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