AD8515ART datasheet(3/16 Pages) AD

3 / 16 page

REV. B

AD8515

–3–

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Condition

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage

VOS

VCM =VS/2

16mV

–40

∞C < TA < +125∞C8

Input Bias Current

VS = 3.0 V

–40

∞C < TA < +85∞C

600

–40

∞C < TA < +125∞C8

Input Offset Current

IOS

110

–40

∞C < TA < +125∞C

300

Input Voltage Range

Common-Mode Rejection Ratio CMRR

0 V

£ VCM £ 3.0 V

Large Signal Voltage Gain

AVO

RL = 100 k

W, 0.3 V £ VOUT £ 2.7 V

250

1,000

V/mV

Offset Voltage Drift

DVOS/DT4

mV/∞C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

IL = 100

mA, –40∞C < TA < +125∞C

2.99

IL = 750

mA, –40∞C < TA < +125∞C

2.98

Output Voltage Low

VOL

IL = 100

mA, –40∞C < TA < +125∞C10

IL = 750

mA, –40∞C < TA < +125∞C20

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = 1.8 V to 5.0 V,

–40

∞C < TA < +125∞C65

Supply Current/Amplifier

ISY

VOUT = VS/2

300

450

–40

∞C < TA < +125∞C

500

DYNAMIC PERFORMANCE

Slew Rate

RL = 10 k

2.7

Gain Bandwidth Product

GBP

MHz

NOISE PERFORMANCE

Voltage Noise Density

f = 1 kHz

nV/

÷Hz

f = 10 kHz

nV/

÷Hz

Current Noise Density

f = 1 kHz

0.05

pA/

÷Hz

(VS = 3.0 V, VCM = VS/2, TA = 25 C, unless otherwise noted.)

Specifications subject to change without notice.

AD8515ART 数据表(PDF) 3 Page - Analog Devices

AD8515ART 数据表(HTML) 3 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

数据表下载