℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

650

Drain-source diode forward voltage(note2)

1.5

V

Zero gate voltage drain current

25

µA

Gate-body leakage current (note2)

±

100

nA

On characteristics (note2)

Gate-threshold voltage

2.0

4.0

V

Static drain-source on-resistance

3.0

Ω

Dynamic characteristics (note 3)

Input capacitance

760

Output capacitance

180

Reverse transfer capacitance

20

pF

Switching characteristics (note 3)

Total gate charge

5.0

10

Gate-source charge

2.7

Gate-drain charge

2.0

nC

Turn-on delay time (note3)

20

Turn-on rise time (note3)

10

Turn-off delay time (note3)

40

Turn-off fall time (note3)

20

ns

Notes :

1.

L=

℃.

2.

Pulse Test : Pulse width≤300µs, duty cycle ≤2%.

3.

These parameters have no way to verify.

2 of 2

sales@zpsemi.com

www.zpsemi.com

CJU04N65A