TO-252-2L Plastic-Encapsulate MOSFETS

CJU05N60

N-CHANNEL POWER MOSFET

DESCRIPTION

This advanced high voltage MOSFET is designed to withstand

high energy in the avalanche mode and switch efficiently. This new

high energy device also offers a drain-to-source diode with fast

recovery time.

Designed for high voltage, high speed switching applications

such as power suplies, converters, power motor controls and bridge

circuits.

FEATURES

Lower Capacitances

Lower Total Gate Charge

Avalanche Energy Specified

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

600

Gate-Source Voltage

±30

V

Continuous Drain Current

4.5

A

Single Pulsed Avalanche Energy (note1)

2

50

mJ

℃)

1.25

℃)

120

W

Thermal Resistance from Junction to Ambient

100

℃/W

Junction Temperature

150

Storage Temperature Range

-50 ~+150

℃

1. GATE

2. DRAIN

3. SOURCE

TO-252-2L

1 of 2

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CJU05N60