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ADP3522 数据表(PDF) 2 Page - Analog Devices

部件名 ADP3522
功能描述  GSM Power Management System
PDF  20 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP3522 数据表(HTML) 2 Page - Analog Devices

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REV. 0
–2–
ADP3522–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
SHUTDOWN SUPPLY CURRENT
ICC
VBAT
≤ 2.5 V
VBAT = VBAT2 = 2.3 V
15
40
µA
(Deep Discharged Lockout Active)
2.5 V < VBAT
≤ 3.2 V
VBAT = VBAT2 = 3.0 V
30
55
µA
(UVLO Active)
VBAT > 3.2 V
VBAT = VBAT2 = 4.0 V
45
80
µA
OPERATING GROUND CURRENT
IGND
VBAT = 3.6 V
VSIM, VCORE, VMEM, VRTC On
Minimum Loads
225
300
µA
All LDOs On
Minimum Loads
345
450
µA
All LDOs On
Maximum Loads
1.0
3.0
% of Max
Load
UVLO ON THRESHOLD
VUVLO
Rising Edge
3.2
3.3
V
UVLO HYSTERESIS
200
mV
DEEP DISCHARGED LOCKOUT ON
VDDLO
Falling Edge
2.4
2.75
V
THRESHOLD
DEEP DISCHARGED LOCKOUT
100
mV
HYSTERESIS
INPUT HIGH VOLTAGE
VIH
PWRONIN
1.0
V
TCXOEN, SIMEN,
1.5
V
CHGEN, GATEIN, SIMVSEL
INPUT LOW VOLTAGE
VIL
0.3
V
(PWRONIN, TCXOEN, SIMEN,
CHGEN, SIMVSEL)
PWRONIN Pin Pull-Down Resistor
RPD
200
1000
5000
k
INPUT HIGH BIAS CURRENT
IIH
1.0
µA
(TCXOEN, SIMEN,
CHGEN,
SIMVSEL )
INPUT LOW BIAS CURRENT
IIL
–1.0
µA
(PWRONIN, TCXOEN, SIMEN,
CHGEN, SIMVSEL)
PWRONKEY INPUT HIGH VOLTAGE
VIH
0.7
VBAT
V
PWRONKEY INPUT LOW VOLTAGE
VIL
0.3
VBAT
V
PWRONKEY INPUT PULL-UP
70
100
130
k
RESISTANCE TO VBAT
THERMAL SHUTDOWN
160
ºC
THRESHOLD
2
THERMAL SHUTDOWN
45
ºC
HYSTERESIS
(–20 C < TA < +85 C, VBAT = VBAT2 = 3 V–5.5 V, CVSIM = CVCORE = CVAN =
CVMEM = 2.2
F, VTCXO = 0.22
F, CVRTC = 0.1
F, CVBAT = 10
F, minimum
loads applied on all outputs, unless otherwise noted.)



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