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BUW40B 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUW40B 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistors BUW40/A/B DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B · High Switching Speed · High Power Dissipation APPLICATIONS · Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V BUW40 450 V BUW40A 550 BUW40B 650 VCEO(SUS) Collector-Emitter Voltage BUW40 300 V BUW40A 350 BUW40B 400 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
类似零件编号 - BUW40B |
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类似说明 - BUW40B |
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