BUR52 datasheet(1/2 Pages) ISC

部件名	BUR52

功能描述	isc Silicon NPN Power Transistors

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistor

BUR52

DESCRIPTION

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 250V(Min)

·

High Current Capability

·

Low Saturation Voltage

: VCE(sat)= 1.0V(Max)@ IC= 25A

APPLICATIONS

·

Designed for switching and linear applications in military

and industrial equipment.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.5

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

350

V

VCEO(SUS)

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

60

A

ICM

Collector Current-Peak

80

A

IB

Base Current-Continuous

16

A

PC

Collector Power Dissipation

@TC=100℃

350

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

类似零件编号 - BUR52

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