2SD2633 datasheet(1/2 Pages) ISC

部件名	2SD2633

功能描述	isc Silicon NPN Darlington Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Darlington Power Transistor

2SD2633

DESCRIPTION

·

High DC Current Gain-

: hFE = 2000(Min)@ IC= 6A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 100V(Min)

·

Low Collector-Emitter Saturation Voltage-

: VCE(sat) =1.5V(Max)@ IC= 6A

APPLICATIONS

·

Designed for general purpose amplifier and low speed

switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

8

A

IB

Base Current

1

A

PC

Collector Power Dissipation

TC=25℃

35

W

Collector Power Dissipation

Ta=25℃

2

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

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