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2STD1665 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2STD1665
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2STD1665 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2STD1665 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2STD1665 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2STD1665
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCE(sat)-1NOTE
Collector-Emitter Saturation Voltage IC= 0.1A; IB= 5mA
50
mV
VCE(sat)-2NOTE
Collector-Emitter Saturation Voltage IC= 1.0A; IB= 50mA
0.12
V
VCE(sat)-3NOTE
Collector-Emitter Saturation Voltage IC= 2.0A; IB= 50mA
0.20
V
VCE(sat)-4NOTE
Collector-Emitter Saturation Voltage IC= 6.0A; IB= 150mA
0.60
V
VCE(sat)-5NOTE
Collector-Emitter Saturation Voltage IC= 6A; IB= 300mA
0.38
V
VBE(sat)NOTE
Base-Emitter Saturation Voltage
IC= 4A; IB= 200mA
1.15
V
VBE(ON)NOTE
Base-Emitter On Voltage
IC= 4A;VCE=1V
1.0
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
50
nA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
10
nA
hFE-1
DC Current Gain
IC= 10mA; VCE= 1V
150
hFE-2
DC Current Gain
IC= 2A; VCE= 1V
150
350
hFE-3
DC Current Gain
IC= 5A; VCE= 1V
90
hFE-4
DC Current Gain
IC= 10A; VCE= 1V
30
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
45
pF
NOTE:Pulse test PW≤300us,duty cycle ≤2%



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