IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN 36N100

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 15 V; I

18

40

S

C

iss

9200

pF

C

oss

V

GS

= 0 V, V

1200

pF

C

rss

300

pF

t

d(on)

41

n s

t

r

V

GS

= 10 V, V

55

n s

t

d(off)

R

G

= 1

Ω (External),

110

n s

t

f

30

n s

Q

g(on)

380

nC

Q

gs

V

GS

= 10 V, V

65

nC

Q

gd

185

nC

R

thJC

0.18

K/W

R

thCK

0.05

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

36

A

I

SM

Repetitive;

144

A

pulse width limited by T

JM

V

SD

I

1.3

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

180

n s

T

330

n s

Q

RM

T

µC

I

RM

8A

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

31.50

31.88

1.240

1.255

B

7.80

8.20

0.307

0.323

C

4.09

4.29

0.161

0.169

D

4.09

4.29

0.161

0.169

E

4.09

4.29

0.161

0.169

F

14.91

15.11

0.587

0.595

G30.12

30.30

1.186

1.193

H

38.00

38.23

1.496

1.505

J

11.68

12.22

0.460

0.481

K

8.92

9.60

0.351

0.378

L

0.76

0.84

0.030

0.033

M

12.60

12.85

0.496

0.506

N

25.15

25.42

0.990

1.001

O

1.98

2.13

0.078

0.084

P

4.95

5.97

0.195

0.235

Q

26.54

26.90

1.045

1.059

R

3.94

4.42

0.155

0.174

S

4.72

4.85

0.186

0.191

T

24.59

25.07

0.968

0.987

U

-0.05

0.1

-0.002

0.004