IXFN120N20 datasheet(1/2 Pages) IXYS

部件名	IXFN120N20

功能描述	HiPer FET Power MOSFETs

PDF	2 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

200

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MW

200

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

120

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

480

A

I

AR

T

C

= 25

°C

120

A

E

AR

T

C

= 25

°C64

mJ

E

AS

T

C

= 25

°C3

J

dv/dt

I

S

£ I

DM, di/dt £ 100 A/ms, VDD £ VDSS

5

V/ns

T

J

£ 150°C, R

G = 2 W

P

D

T

C

= 25

°C

600

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

-

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL £ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

30

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 3mA

200

V

GS(th)

V

DS = VGS, ID = 8mA

2

4 V

I

GSS

V

GS = ±20 V, VDS = 0

±200 nA

I

DSS

V

DS

= V

DSS

T

J =

25

°C

100

mA

V

GS = 0 V

T

J = 125°C2 mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

17 m

W

Note 1

96538C (7/99)

IXFN 120N20

V

DSS

=

200 V

I

D25

=

120 A

R

DS(on) =

17 m

W

t

rr £ 250 ns

HiPerFETTM

Power MOSFETs

Single MOSFET Die

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Features

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• International standard package

• miniBLOC, with Aluminium nitride

isolation

• Low R

DS (on) HDMOS

TM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount

• Space savings

• High power density

Preliminary data sheet

IXYS reserves the right to change limits, test conditions, and dimensions.

类似零件编号 - IXFN120N20

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	IXFN120N20	535Kb / 3P	N-Channel MOSFET

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