2SC1815 datasheet(2/2 Pages) ISC

2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon NPN Transistor

2SC1815

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 100mA ; IB= 10mA

0.25

VBE(sat)

Base-Emitter Saturation Voltage

IC= 100mA ; IB= 10mA

1.0

ICBO

Emitter Cutoff Current

VCB= 60V; IE= 0

0.1

IEBO

Collector Cutoff Current

VEB= 5V; IC= 0

0.1

hFE(1)

DC Current Gain

IC= 2mA ; VCE= 6V

700

hFE(2)

DC Current Gain

IC= 150mA ; VCE= 6V

Current-Gain—Bandwidth Product

IC= 1mA; VCE= 10V;

MHz

Cob

Collector Output Capacitance

VCB=10V; IE=0; f=1MHz

3.5

Rbb'

Base Intrinsic Resistance

VCE=10V,IE=-1mA;f=30MHz

Noise Figure

VCE=6V,IC=0.1mA;f=1KHz,

RG=10KΩ



hFE(1) Classifications

70-140

120-400

200-400

350-700

2SC1815 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

2SC1815 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

数据表下载

链接网址

2SC1815 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

2SC1815 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

数据表 下载

链接网址

数据表下载