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2SC4331 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4331 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SC4331 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= 3A; IB= 150mA 0.3 V VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= 4A; IB= 200mA 0.5 V VBE(sat)-1NOTE Base-Emitter Saturation Voltage IC= 3A; IB= 150mA 1.2 V VBE(sat)-2NOTE Base-Emitter Saturation Voltage IC= 4A; IB= 200mA 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μ A hFE-1NOTE DC Current Gain IC= 0.5A; VCE= 2V 100 hFE-2NOTE DC Current Gain IC= 1A; VCE= 2V 100 400 hFE-3NOTE DC Current Gain IC= 3A; VCE= 2V 60 COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 60 pF fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 10V 150 MHz NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse hFE-2 Classifications M L K 100-200 150-300 200-400 |
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