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2N85-TO3 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N85-TO3 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 2N85 · ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 850 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.0 4.5 V VSD Diode Forward On-voltage IS= 2A ;VGS= 0 1.4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1A 8.0 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS=850V; VGS= 0 10 µA tr Rise Time VGS=10V; ID=1A; VDD=125V; RL=50Ω 150 ns td(on) Turn-on Delay Time 50 tf Fall Time 100 td(off) Turn-off Delay Time 200 · |
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