ASIPT9733 datasheet(1/1 Pages) ASI

部件名	ASIPT9733

功能描述	NPN SILICON RF POWER TRANSISTOR

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 25 mA

35

V

BVCES

IC = 50 mA

60

V

BVEBO

IE = 8.0 mA

4.0

V

ICES

VCE = 25 V

2.0

mA

hFE

VCE = 10 V

IC = 500 mA

20

150

---

Cob

VCB = 28 V

f = 1.0 MHz

90

Pf

PG

ηηηη

C

VSWR

VCE = 28 V

POUT =50 W

f = 175 MHz

PIN = 10 W

6.0

60

6.0

60

∞

dB

%

---

NPN SILICON RF POWER TRANSISTOR

PT9733

DESCRIPTION:

The

ASI PT9733 is an NPN power

transistor designed for 25 V Class-C

ground station transmitters, it utilizes

emitter ballasting and gold metalization

to provide optimum VSWR capability.

FEATURES:

• Common Emitter

• P

G = 6.0 dB at 50 W/175 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

8.0 A

VCES

60 V

VEBO

4.0 V

PDISS

85 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +150 °C

θθθθ

JC

2.1 °C/W

PACKAGE STYLE .380 4L STUD

MINIMUM

inches / mm

.004 / 0.10

.370 / 9.40

.320 / 8.13

B

C

D

E

F

G

A

M AXIMUM

.385 / 9.78

.330 / 8.38

.130 / 3.30

.007 / 0.18

inches / mm

H

.090 / 2.29

.100 / 2.54

DIM

.220 / 5.59

.230 / 5.84

.490 / 12.45

.450 / 11.43

I

J

.155 / 3.94

.175 / 4.45

.750 / 19.05

.980 / 24.89

.100 / 2.54

E

F

D

ØC

B

.112x45°

G

H

J

I

A

#8-32 UNC-2A

C

B

E

类似零件编号 - ASIPT9733

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