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ISO7730, ISO7731

SLLSES0B – SEPTEMBER 2016 – REVISED OCTOBER 2016

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Copyright © 2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak

voltage values.

(3)

Maximum voltage must not exceed 6 V.

6 Specifications

6.1 Absolute Maximum Ratings

(1)

MIN

MAX

UNIT

–0.5

6

V

V

Voltage at INx, OUTx, ENx

–0.5

(3)

V

Output current

–15

15

mA

Junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±6000

V

Charged device model (CDM), per JEDEC specification JESD22-C101, all

±1500

(1)

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

Supply voltage

2.25

5.5

V

UVLO threshold when supply voltage is rising

2

2.25

V

UVLO threshold when supply voltage is falling

1.7

1.8

V

Supply voltage UVLO hysteresis

100

200

mV

High-level output current

–4

mA

–2

–1

Low-level output current

4

mA

2

1

High-level input voltage

(1)

V

Low-level input voltage

0

V

DR

Data rate

0

100

Mbps

Ambient temperature

–55

25

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

ISO773x

UNIT

DW (SOIC)

DBQ (QSOP)

16 Pins

16 Pins

Junction-to-ambient thermal resistance

81.4

109.0

°C/W

Junction-to-case(top) thermal resistance

44.9

46.8

°C/W

Junction-to-board thermal resistance

45.9

60.6

°C/W

Junction-to-top characterization parameter

28.1

35.9

°C/W

Junction-to-board characterization parameter

45.5

60.0

°C/W

Junction-to-case(bottom) thermal resistance

n/a

n/a

°C/W