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OMAP3530ECBBA 数据表(PDF) 54 Page - Texas Instruments |
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OMAP3530ECBBA 数据表(HTML) 54 Page - Texas Instruments |
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54 / 265 page ![]() OMAP3530, OMAP3525 SPRS507H – FEBRUARY 2008 – REVISED OCTOBER 2013 www.ti.com Table 2-2. Ball Characteristics (CBC Pkg.)(1) (continued) BALL BALL BUFFER PULLUP BALL BALL TOP PIN NAME RESET REL. MODE [4] TYPE [5] RESET RESET REL. POWER [9] HYS [10] STRENG TH /DOWN IO CELL [13] BOTTOM [1] [2] [3] MODE [8] STATE [6] STATE [7] (mA) [11] TYPE [12] gpio_191 4 IO safe_mode 7 - V19 NA hsusb0_dir 0 I L L 7 vdds Yes 4 (7) PU100/ LVCMOS PD100 gpio_122 4 IO safe_mode 7 - W18 NA hsusb0_nxt 0 I L L 7 vdds Yes 4 (7) PU100/ LVCMOS PD100 gpio_124 4 IO safe_mode 7 - U20 NA hsusb0_stp 0 O H H 7 vdds Yes 4 (7) PU100/ LVCMOS PD100 gpio_121 4 IO safe_mode 7 - U15 NA jtag_ntrst 0 I L L 0 vdds Yes NA PU100/ LVCMOS PD100 W13 NA jtag_rtck 0 O L 0 0 vdds Yes 4 PU100/ LVCMOS PD100 V14 NA jtag_tck 0 I L L 0 vdds Yes NA PU100/ LVCMOS PD100 U16 NA jtag_tdi 0 I H H 0 vdds Yes NA PU100/ LVCMOS PD100 Y13 NA jtag_tdo 0 O L Z 0 vdds Yes 4 PU100/ LVCMOS PD100 V15 NA jtag_tms_tms 0 IO H H 0 vdds Yes 4 PU100/ LVCMOS c PD100 N19 NA mmc1_clk 0 O L L 7 vdds_mmc1 Yes 8 PU100/ LVCMOS PD100 gpio_120 4 IO safe_mode 7 - L18 NA mmc1_cmd 0 IO L L 7 vdds_mmc1 Yes 8 PU100/ LVCMOS PD100 gpio_121 4 IO safe_mode 7 - M19 NA mmc1_dat0 0 IO L L 7 vdds_mmc1 Yes 8 PU100/ LVCMOS PD100 gpio_122 4 IO safe_mode 7 - M18 NA mmc1_dat1 0 IO L L 7 vdds_mmc1 Yes 8 PU100/ LVCMOS PD100 gpio_123 4 IO safe_mode 7 - K18 NA mmc1_dat2 0 IO L L 7 vdds_mmc1 Yes 8 PU100/ LVCMOS PD100 gpio_124 4 IO safe_mode 7 - N20 NA mmc1_dat3 0 IO L L 7 vdds_mmc1 Yes 8 PU100/ LVCMOS PD100 gpio_125 4 IO safe_mode 7 - M20 NA mmc1_dat4 0 IO L L 7 vdds_mmc1a No 8 PU/PD (8) LVCMOS gpio_126 4 IO safe_mode 7 - P17 NA mmc1_dat5 0 IO L L 7 vdds_mmc1a No 8 PU/PD (8) LVCMOS gpio_127 4 IO safe_mode 7 - P18 NA mmc1_dat6 0 IO L L 7 vdds_mmc1a No 8 PU/PD (8) LVCMOS gpio_128 4 IO safe_mode 7 - (8) The PU nominal drive strength of this IO cell is equal to 25 mA @ 1.8 V and 41.6 mA @ 3.0 V. The PD nominal drive strength of this IO cell is equal to 1 mA @ 1.8 V and 1.66 mA @ 3.0 V. 54 TERMINAL DESCRIPTION Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: OMAP3530 OMAP3525 |
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