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2N6235 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2N6235
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2N6235 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6235 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6235 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2N6235
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 20mA ; IB= 0
325
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
0.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1.0A
2.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC=1A; IB= 0.1A
1.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC=5A; IB= 1.0A
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 1A ; VCE= 5V
1.0
V
ICEO
Collector Cutoff Current
VCE= 325V; IB= 0
1.0
mA
ICBO
Collector Base Cutoff Current
VCB=350V; IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
0.1
mA
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 5V
25
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
25
125
hFE-3
DC Current Gain
IC= 3A ; VCE= 5V
10
fT
Current-Gain—Bandwidth Product
IC= 0.25A ; VCE= 10V; ftest= 10MHz
20
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 0.1MHz
250
pF



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