2N6582 datasheet(2/2 Pages) ISC

部件名	2N6582

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

2 / 2 page

INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon NPN Power Transistor

2N6582

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBO

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

350

VCE(sat)

Collector-Emitter Saturation Voltage IC= 10A; IB= 1.0A

1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 10A; IB= 1.0A

2.0

ICEO

Collector Cutoff Current

VCE= 350V; IB= 0

1.0

ICBO

Collector Cutoff Current

VCB= 450V ; IE= 0

1.0

IEBO

Emitter Cutoff Current

VEB= 9V; IC=0

0.1

hFE-1

DC Current Gain

IC= 5A ; VCE= 3V

hFE-2

DC Current Gain

IC= 10A ; VCE= 3V

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 10V

MHz

COB

Output Capacitance

IE= 0;VCB= 10V; ftest=1MHz

250

2N6582 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

2N6582 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

数据表下载

链接网址

2N6582 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

2N6582 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

数据表 下载

链接网址

数据表下载