ASISD1006 datasheet(1/1 Pages) ASI

部件名	ASISD1006

功能描述	NPN SILICON HIGH FREQUENCY TRANSISTOR

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25 °C

NONE

SYMBOL

TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM

UNITS

BVCEO

IC = 5.0 mA

30

V

BVCBO

IC = 100 µA

50

V

BVEBO

IE = 100 µA

5.0

V

ICEO

VCE = 28 V

100

µA

hFE

VCE = 15 V

IC = 50 mA

30

300

---

ft

VCE = 15 V

IC = 50 mA

1500

1800

MHz

Cob

VCB = 30 V

f = 100 KHz

2.5

3.5

pF

Cib

VEB = 0.5 V

f = 100 KHz

8.0

10

pF

NFNB

VCE = 10 V

IC = 10 mA

f = 2000 MHz

2.7

dB

NFBB

VCE = 15 V

IC = 50 mA

f = 216 MHz

7.0

8.0

dB

GVE

VCE = 15 V

IC = 50 mA

f = 216 MHz

7.2

6.8

dB

XMOD

VCE = 15 V

IC = 50 mA

Pout = +45 dbmV

-60

-57

dB

2NDO

VCE = 15 V

IC = 50 mA

Pout = +45 dbmV

-60

-50

dB

NPN SILICON HIGH FREQUENCY TRANSISTOR

SD1006

DESCRIPTION:

The

ASI SD1006 is a High Frequency

Transistor for General Purpose

Amplifier Applications.

MAXIMUM RATINGS

IC

400 mA

VCEO

30 V

VCBO

50 V

PDISS

3.5 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +200 °C

θ

JC

50 °C/W

PACKAGE STYLE TO-39

1 = EMITTER

2 = BASE

3 = COLLECTOR

类似零件编号 - ASISD1006

制造商	部件名	数据表	功能描述
Advanced Semiconductor	ASISD1425	26Kb / 2P	NPN SILICON RF POWER TRANSISTOR
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	ASISD1530-7	19Kb / 1P	NPN SILICON RF POWER TRANSISTOR
	ASISD1905	15Kb / 1P	HF/VHF POWER MOSFET N-Channel Enhancement Mode

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类似说明 - ASISD1006

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