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PL502-02HSC-R 数据表(PDF) 3 Page - Micrel Semiconductor |
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PL502-02HSC-R 数据表(HTML) 3 Page - Micrel Semiconductor |
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3 / 5 page ![]() PL502-02 Low Phase Noise VCXO (24MHz to 50MHz) Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1(408) 944 -0800 • fax +1(408) 474-1000 • www.micrel.com Rev 5/16/11 Page 3 3. DC Specifications PARAMETERS SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Supply Current, Dynamic, with Loaded Outputs IDD FXIN = 25MHz Output load 10pF 16 20 mA Operating Voltage VDD 2.97 3.63 V Output Drive Current (High Drive) IOH VOH= VDD-0.4V, VDD=3.3V 30 mA IOL VOL = 0.4V, VDD = 3.3V 30 mA Output Drive Current (Standard Drive) IOH VOH= VDD-0.4V, VDD=3.3V 10 mA IOL VOL = 0.4V, VDD = 3.3V 10 mA VCXO Control Voltage VCON 0 3.3 V 4. Voltage Control Crystal Oscillator PARAMETERS SYMBOL CONDITIONS MIN. TYP. MAX. UNITS VCXO Stabilization Time * TVCXOSTB From power valid 10 ms VCXO Tuning Range FXIN = 12 – 25MHz; XTAL C0/C1 < 250 0V VCON 3.3V 500 ppm CLK output pullability VCON=1.65V, 1.65V 200 ppm VCXO Tuning Characteristic 165 ppm/V Pull range linearity 10 % VCON pin input impedance 2000 kΩ VCON modulation BW 0V VCON 3.3V, -3dB 10 kHz Note: Parameters denoted with an asterisk (*) represent no minal characterization data and are not production tested to any specific limits. 5. Jitter and Phase Noise Specification PARAMETERS CONDITIONS MIN. TYP. MAX. UNITS RMS Period Jitter (1 sigma – 1000 samples) 44MHz, with capacitive decoupling between VDD and GND 3 ps Phase Noise relative to carrier 44MHz @100Hz offset -100 dBc/Hz Phase Noise relative to carrier 44MHz @1kHz offset -123 dBc/Hz Phase Noise relative to carrier 44MHz @10kHz offset -130 dBc/Hz Phase Noise relative to carrier 44MHz @100kHz offset -125 dBc/Hz Phase Noise relative to carrier 44MHz @1MHz offset -125 dBc/Hz |
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