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SIW1711FIF 数据表(PDF) 4 Page - RF Micro Devices

部件名 SIW1711FIF
功能描述  BLUETOOTH RADIO MODEM
PDF  10 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

SIW1711FIF 数据表(HTML) 4 Page - RF Micro Devices

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SiW1711
60 0047 R00Grf SiW1711 Radio Modem IC DS
System Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
ESD Rating
Electrical Characteristics
DC Specification (TOP=+25°C, VDD_IO=3.0V)
AC Characteristics (TOP=+25°C, VDD_IO=3.0V, CLOAD=15pF)
Current Consumption (TOP=+25°C, VBATT_ANA, VBATT_DIG = 3.3 V)
Parameter
Description
Min
Max
Unit
VCC
Analog circuit supply voltage
-0.3
3.63
V
VDD_IO
I/O supply voltage
-0.3
3.63
V
VBATT_ANA
Analog regulator supply voltage
-0.3
3.63
V
VBATT_DIG
Digital regulator supply voltage
-0.3
3.63
V
TST
Storage temperature
-55
+125
°C
RFMAX
Maximum RF input level
+5
dBm
Absolute maximum ratings indicate limits beyond which the useful life of the device may be impaired or damage may occur.
Parameter
Description
Min
Max
Unit
TOP
Operating temperature (industrial grade)
-40
+85
°C
TEOP
Extended operating temperature
-40
+105
°C
VBATT_ANA
Supply for internal analog voltage regulator
2.3
3.63
V
VBATT_DIG
Supply for internal digital voltage regulator
2.3
3.63
V
VCC
Analog supply voltage
1.71
1.89
V
VDD_IO
Digital interface I/O supply voltage
1.62
3.63
V
Symbol
Description
Rating
ESD
ESD protection - all pins1, human body model
2000 V
ESD
ESD protection - all pins, machine model
200 V
1This device is a high performance RF integrated circuit with an ESD rating of 2,000 volts (HBM conditions per Mil-Std-883, Method
3015). Handling and assembly of this device should only be done using appropriate ESD controlled processes.
Symbol
Description
Min.
Typ.
Max.
Unit
VIL
Input low voltage
GND-0.1
0.3*VDD_IO
V
VIH
Input high voltage
0.7*VDD_IO
VDD_IO
V
VOL
Output low voltage
GND
0.2*VDD_IO
V
VOH
Output high voltage
0.8*VDD_IO
VDD_IO
V
IOH
Output high current
500
µA
Output high current (pins 16, 19)
4
mA
IOL
Output low current
500
µA
Output low current (pins 16, 19)
4
mA
IILI
Input leakage current
<1
1
µA
Symbol
Description
Min.
Typ.
Max.
Unit
tr
Rise time
30
ns
Rise time (pins 16, 19)
16
ns
tf
Fall time
24
ns
Fall time (pins 16, 19)
13
ns
Symbol
Description
Min.
Typ.
Max.
Unit
IDD_SLEEP
Current during sleep mode
8
30
µA
IDD_IDLE
Current during idle, synthesizer not running
3
5
mA
IDD_TRANSMIT
Current during continuous transmit
55
65
mA
IDD_RECEIVE
Current during continuous receive
68
75
mA



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