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ADPD2211ACPZ-R7 数据表(PDF) 4 Page - Analog Devices

部件名 ADPD2211ACPZ-R7
功能描述  Low Noise, High Sensitivity Optical Sensor
PDF  14 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADPD2211ACPZ-R7 数据表(HTML) 4 Page - Analog Devices

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Data Sheet
ADPD2211
Rev. 0 | Page 3 of 13
SPECIFICATIONS
VCC = 3.3 V, TA = 25°C, λ = 528 nm, unless otherwise noted. IPD is the photodiode current, IMOD is the modulation current, EE is
irradiance, IOUT is output current, VBIAS is the bias voltage, RFEEDBACK is the TIA feedback resistor, and RLOAD is the load resistance.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
GAIN
Gain (Current Amplifier)
βTLA
24
DYNAMIC PERFORMANCE
Frequency Response Peaking
<6
dB
Rise Time
tR
10% to 90% full scale (FS) (IOUT = 24 µA)
1.24
µs
Fall Time
tF
90% to 10% FS (IOUT =24 µA)
1.27
µs
Bandwidth
BW
IPD = 10 nA, IMOD = 1 nA
400
kHz
OPTICAL PERFORMANCE
Diode Active Area
1.8
mm2
Saturation Irradiance
2200
µW/cm2
NOISE PERFORMANCE
Current Noise, Output Referred1
EE = 0 µW/cm2
1920
fA/√Hz
IPD = 10 nA to 300 nA
1.4 × NSHOT
fA/√Hz
IPD > 300 nA
1.15 × NSHOT
fA/√Hz
Current Noise Floor, Input Referred
EE = 0 µW/cm2, at 1 kHz
90
150
fA/√Hz
Noise Equivalent Power
NEP
At 1 kHz
100
fW/√Hz
EE Required for SNR = 10000:1
At 1 kHz
200
nW/cm2
POWER AND SUPPLY
Supply Voltage
VCC
1.8
3.3
5.0
V
Power Supply Rejection Ratio
PSRR
VCC = 1.8 V to 5.0 V, EE = 2200 µW/cm2
120
nA/V
Current
Standby
ISTANDBY
PWDN > VIH
1
µA
Supply at EE = 0 µW/cm2
IFLOOR
137
µA
Supply2
ISUPPLY
IOUT = 10 µA
166
µA
IOUT = 240 µA
950
µA
OUTPUT CHARACTERISTICS
Amplifier Static Bias Current
Input Referred
EE = 0 µW/cm2
10
nA
Output Referred
EE = 0 µW/cm2
240
nA
Maximum Output Voltage
VOUT_MAX
VCC − 0.75
V
Nominal Linear Output Current
IOUT_FS
240
µA
Linearity into TIA
VBIAS = 1.3 V, RFEEDBACK = 25 kΩ
60
dB
Linearity into Resistive Load
IOUT < 100 µA , RLOAD = 5 kΩ
60
dB
Peak Output Current3
300
µA
Output Capacitance
COUT
From OUT to GND
5
pF
Output Resistance
ROUT
From OUT to GND
1000
MΩ
POWER-DOWN LOGIC
Input Voltage
High Level
VIH
VCC − 0.2
V
Low Level
VIL
0.2
V
Leakage Current
High
IIH
PWDN = 3.3 V
0.2
nA
Low
IIL
PWDN = 0 V
−8.5
µA
OPERATING AMBIENT TEMPERATURE RANGE
−40
+85
°C
1
NSHOT refers to photon shot noise. Photon shot noise is the fundamental noise floor for all photodetectors in photoconductive mode.
2
ISUPPLY = IFLOOR + (3.3 × IOUT).
3
Outputs greater than IOUT_FS may have degraded performance.



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