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ADPD2212ACPZ-R7 数据表(PDF) 4 Page - Analog Devices

部件名 ADPD2212ACPZ-R7
功能描述  Low Noise, High Sensitivity Optical Sensor
PDF  14 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADPD2212ACPZ-R7 数据表(HTML) 4 Page - Analog Devices

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Data Sheet
ADPD2212
Rev. 0 | Page 3 of 13
SPECIFICATIONS
VCC = 3.3 V, TA = 25°C, λ = 528 nm, unless otherwise noted. IPD is the photodiode current, IMOD is the modulation current, EE is
irradiance, IOUT is output current, VBIAS is the bias voltage, RFEEDBACK is the TIA feedback resistor, and RLOAD is the load resistance.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
GAIN
Gain (Current Amplifier)
β
TLA
24
DYNAMIC PERFORMANCE
Frequency Response Peaking
<6
dB
Rise Time
t
R
10% to 90% full scale (FS) (I
OUT = 24 µA)
1.24
µs
Fall Time
t
F
90% to 10% FS (I
OUT =24 µA)
1.27
µs
Bandwidth
BW
I
PD = 10 nA, IMOD = 1 nA
400
kHz
OPTICAL PERFORMANCE
Diode Active Area
2.5
mm2
Saturation Irradiance
1600
µW/cm2
NOISE PERFORMANCE
Current Noise, Output Referred1
E
E = 0 µW/cm
2
1920
fA/√Hz
I
PD = 10 nA to 300 nA
1.4 × N
SHOT
fA/√Hz
I
PD > 300 nA
1.15 × N
SHOT
fA/√Hz
Current Noise Floor, Input Referred
E
E = 0 µW/cm
2, at 1 kHz
90
150
fA/√Hz
Noise Equivalent Power
NEP
At 1 kHz
100
fW/√Hz
E
E Required for SNR = 10000:1
At 1 kHz
144
nW/cm2
POWER AND SUPPLY
Supply Voltage
V
CC
1.8
3.3
5.0
V
Power Supply Rejection Ratio
PSRR
V
CC = 1.8 V to 5.0 V, EE = 1600 µW/cm
2
120
nA/V
Current
Standby
I
STANDBY
PWDN > V
IH
1
µA
Supply at E
E = 0 µW/cm
2
I
FLOOR
137
µA
Supply2
I
SUPPLY
I
OUT = 10 µA
166
µA
I
OUT = 240 µA
857
µA
OUTPUT CHARACTERISTICS
Amplifier Static Bias Current
Input Referred
E
E = 0 µW/cm
2
10
nA
Output Referred
E
E = 0 µW/cm
2
240
nA
Maximum Output Voltage
V
OUT_MAX
V
CC − 0.75
V
Nominal Linear Output Current
I
OUT_FS
240
µA
Linearity into TIA
V
BIAS = 1.3 V, RFEEDBACK = 25 kΩ
60
dB
Linearity into Resistive Load
I
OUT < 100 µA , RLOAD = 5 kΩ
60
dB
Peak Output Current3
300
µA
Output Capacitance
C
OUT
From OUT to GND
5
pF
Output Resistance
R
OUT
From OUT to GND
1000
MΩ
POWER-DOWN LOGIC
Input Voltage
High Level
V
IH
V
CC − 0.2
V
Low Level
V
IL
0.2
V
Leakage Current
High
I
IH
PWDN = 3.3 V
0.2
nA
Low
I
IL
PWDN = 0 V
−8.5
µA
OPERATING AMBIENT TEMPERATURE RANGE
−40
+85
°C
1 N
SHOT refers to photon shot noise. Photon shot noise is the fundamental noise floor for all photodetectors in photoconductive mode.
2 I
SUPPLY = IFLOOR + (3 × IOUT).
3 Outputs greater than I
OUT_FS may have degraded performance.



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