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LM1949 数据表(PDF) 2 Page - National Semiconductor (TI) |
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LM1949 数据表(HTML) 2 Page - National Semiconductor (TI) |
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2 / 10 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage 8V Power Dissipation (Note 1) 1235 mW Input Voltage Range b 03V to VCC Operating Temperature Range b 40 Cto a125 C Storage Temperature Range b 65 Cto a150 C Junction Temperature 150 C Lead Temp (Soldering 10 sec) 260 C Electrical Characteristics (VCCe55V VINe24V Tje25 C Figure 1 unless otherwise specified) Symbol Parameter Conditions Min Typ Max Units ICC Supply Current Off VIN e 0V 11 23 mA Peak Pin 8 e 0V 28 54 mA Hold Pin 8 Open 16 26 mA VOH Input On Level VCC e 55V 14 24 V VCC e 30V 12 16 V VOL Input Off Level VCC e 55V 10 135 V VCC e 30V 07 115 V IB Input Current b 25 3 a 25 m A IOP Output Current Peak Pin 8 e 0V b 10 b 22 mA Hold Pin 8 Open b 15 b 5mA VS Output Saturation Voltage 10 mA VIN e 0V 02 04 V Sense Input Vp Peak Threshold VCC e 475V 350 386 415 mV VH Hold Reference 88 94 102 mV t Time-out t tdRTCT 90 100 110 % NOTE 1 For operation in ambient temperatures above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance of 100 CW junction to ambient Typical Circuit Waveforms TLH5062 – 2 2 |
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