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2P4M-D 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2P4M-D 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark isc Thyristors 2P4M-D DESCRIPTION · The 2P4M is P-gate all diffused plastic molded type SCR granted average on-state current 2A(TC=77℃) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Highly sensitive triggering levels · Solid state switches etc · Automatic gas lighter,battery charger · For capacitive discharge ignitions, motor control in kitchen aids, over voltage crowbar protection in low power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak reverse voltage 400 V IT(AV) On-state current 180 ° conduction angle 2 A ITSM Non-repetitive surge peak on-state current t= 20ms 20 A PG(AV) Average gate power dissipation Tj = 125℃ 0.1 W Tj Junction temperature 125 ℃ Tstg Storage temperature -40 to + 150 ℃ |
类似零件编号 - 2P4M-D |
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类似说明 - 2P4M-D |
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