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3DD102 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3DD102 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 3DD102 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) · DC Current Gain- : hFE= 20(Min.)@IC= 2A · Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS · Designed for power amplifier , DC Transform T-Shirt THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~175 ℃ |
类似零件编号 - 3DD102 |
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类似说明 - 3DD102 |
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