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LM199 数据表(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LM199
功能描述  Precision Reference
PDF  12 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM199 数据表(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
Specifications for Military/Aerospace products are not
contained in this datasheet. Refer to the following Reli-
ability
Electrical
Test
Specifications
documents:
RETS199X for LM199, RETS199AX for LM199A.
Temperature Stabilizer Voltage
LM199/LM299/LM399
40V
LM3999
36V
Reverse Breakdown Current
20 mA
Forward Current
LM199/LM299/LM399
1 mA
LM3999
−0.1 mA
Reference to Substrate Voltage V
(RS) (Note 2)
40V
−0.1V
Operating Temperature Range
LM199
−55˚C to +125˚C
LM299
−25˚C to +85˚C
LM399/LM3999
−0˚C to +70˚C
Storage Temperature Range
−55˚C to +150˚C
Soldering Information
TO-92 package (10 sec.)
+260˚C
TO-46 package (10 sec.)
+300˚C
Electrical Characteristics (Notes 3, 6)
Parameter
Conditions
LM199H/LM299H
LM399H
Units
Min
Typ
Max
Min
Typ
Max
Reverse Breakdown Voltage
0.5 mA
≤ I
R ≤ 10 mA
6.8
6.95
7.1
6.6
6.95
7.3
V
Reverse Breakdown Voltage
0.5 mA
≤ I
R ≤ 10 mA
6
9
6
12
mV
Change with Current
Reverse Dynamic Impedance
I
R = 1 mA
0.5
1
0.5
1.5
Ω
Reverse Breakdown
−55˚C
≤T
A≤+85˚C
LM199
0.00003
0.0001
%/˚C
Temperature Coefficient
+85˚C
≤T
A≤+125˚C
0.0005
0.0015
%/˚C
−25˚C
≤T
A≤85˚C
LM299
0.00003
0.0001
%/˚C
0˚C
≤T
A≤+70˚C
LM399
0.00003
0.0002
%/˚C
RMS Noise
10 Hz
≤ f ≤ 10 kHz
7
20
7
50
µV
Long Term Stability
Stabilized, 22˚C
≤T
A≤28˚C,
20
20
ppm
1000 Hours, I
R=1mA±0.1%
Temperature Stabilizer
T
A=25˚C, Still Air, VS=30V
8.5
14
8.5
15
mA
Supply Current
T
A =− 55˚C
22
28
Temperature Stabilizer
9
40
9
40
V
Supply Voltage
Warm-Up Time to 0.05%
V
S = 30V, TA = 25˚C
3
3
sec.
Initial Turn-on Current
9
≤V
S≤40, TA=+25˚C, (Note 4)
140
200
140
200
mA
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Electrical Characteristics (Note 3)
Parameter
Conditions
LM3999Z
Units
Min
Typ
Max
Reverse Breakdown Voltage
0.6 mA
≤ I
R ≤ 10 mA
6.6
6.95
7.3
V
Reverse Breakdown Voltage
0.6 mA
≤ I
R ≤ 10 mA
6
20
mV
Change with Current
Reverse Dynamic Impedance
I
R = 1 mA
0.6
2.2
Ω
Reverse Breakdown
0˚C
≤ T
A ≤ 70˚C
0.0002
0.0005
%/˚C
Temperature Coefficient
RMS Noise
10 Hz
≤ f ≤ 10 kHz
7
µV
Long Term Stability
Stabilized, 22˚C
≤ T
A ≤ 28˚C,
20
ppm
1000 Hours, I
R = 1mA ±0.1%
Temperature Stabilizer
T
A = 25˚C, Still Air, VS = 30V
12
18
mA
Temperature Stabilizer
36
V
Supply Voltage
Warm-Up Time to 0.05%
V
S = 30V, TA = 25˚C
5
sec.
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