DMN2020LSN datasheet(1/2 Pages) ZPSEMI

部件名	DMN2020LSN

功能描述	N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	2 Pages

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制造商	ZPSEMI [ZP Semiconductor]

网页	http://zpsemi.com/

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DMN2020LSN

Features

•

Low On-Resistance

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

ESD Protected Up To 2KV

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SC-59

•

Case Material - Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals: Finish Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Weight: 0.014 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

Continuous

VGSS

±12

V

Continuous Drain Current

Steady

State

TA = 25°C

TA = 85°C

ID

6.9

4.5

A

Pulsed Drain Current (Note 4)

IDM

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Power Dissipation (Note 3)

PD

0.61

W

Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)

RθJA

204

°C /W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

1. No purposefully added lead.

2. Device mounted on FR-4 PCB, with minimum recommended pad layout.

3. Repetitive rating, pulse width limited by junction temperature.

SC-59

TOP VIEW

Pin Out Configuration

TOP VIEW

EQUIVALENT CIRCUIT

Source

Gate

Protection

Diode

Gate

Drain

D

G

S

ESD PROTECTED TO 2kV

N-CHANNEL ENHANCEMENT MODE MOSFET

1 of 2

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