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LM2005 数据表(PDF) 2 Page - National Semiconductor (TI) |
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LM2005 数据表(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page ![]() LM2005T-M and LM2005T-S Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Operating Supply Voltage 18V DC Supply Voltage (Note 1) 28V Peak Supply Voltage (50 ms) 40V Output Current Repetitive (Note 2) 35A Non-Repetitive 45A Power Dissipation 30W Operating Temperature b 40 Cto a85 C Storage Temperature b 60 Cto a150 C Lead Temp (Soldering 10 seconds) 260 C LM2005T-M Electrical Characteristics Refer to the bridge application circuit Figure 1 Tamb e 25 C AV e 50 dB Rth (heatsink) e 4 CW unless otherwise specified Parameter Test Conditions Min Typ Max Units Supply Voltage 818 V Output Offset Voltage (Note 3) VS e 144V g 20 g 150 mV (between Pin 8 and 10) VS e 132V g 150 mV Total Quiescent Drain Current VS e 144V RL e 4X 75 150 mA Includes Current in Feedback Resistors VS e 132V RL e 32X 70 160 mA Output Power d e 10% f e 1 kHz VS e 144V RL e 4X 18 20 W RL e 32X 20 22 W VS e 132V RL e 32X 17 19 W THD f e 1 kHz VS e 144V RL e 4X PO e 50 mW to 15W 1 % VS e 132V RL e 32X PO e 50 mW to 13W 1 % Input Sensitivity f e 1 kHz PO e 2W RL e 4X 9mV PO e 2W RL e 32X 8mV Input Resistance f e 1 kHz 70 kX Low Frequency Roll Off (b3 dB) RL e 32X 40 Hz High Frequency Roll Off (b3 dB) RL e 32X 20 kHz Closed Loop Voltage Gain f e 1 kHz 45 50 dB Total Input Noise Voltage Rg e 10 kX (Note 4) 3 10 m V Supply Voltage Rejection Rg e 10 kX fripple e 100 Hz 45 55 dB C4 e 10 mFVripple e 05V Efficiency VS e 144V f e 1 kHz PO e 20W RL e 4X 60 % PO e 22W RL e 32X 60 % VS e 132V f e 1 kHz PO e 19W RL e 32X 58 % Output Voltage with One Side VS e 144V RL e 4X 2V of the Speaker Shorted to Ground VS e 132V RL e 32V Note 1 Internal voltage limit Shuts down above 20V Note 2 Internal current limit Note 3 For LM2005T-M only Note 4 Bandwidth filter 22 Hz to 22 kHz 2 |
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